ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,057, issued on Aug. 25, was assigned to SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION (Seoul, South Korea). "Vacuum packaging manufacturing met... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,058, issued on Aug. 25, was assigned to Tokyo Electron Ltd. (Tokyo). "Substrate processing method and substrate processing apparatus" was i... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,059, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Titanium nitride gapfill processes for semiconductor... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,060, issued on Aug. 25, was assigned to Geminatio Inc. (N.Y.). "Generation of multiline etch substrates" was invented by Brennan Peterson (... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,061, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Treatments to enhance material structures" was inven... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,062, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Methods to improve oxide sidewall quality" was inven... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,063, issued on Aug. 25, was assigned to Tokyo Electron Ltd. (Tokyo). "Method of forming silicon nitride film and film forming apparatus" wa... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,064, issued on Aug. 25, was assigned to Tokyo Electron Ltd. (Tokyo). "Manufacturing method for semiconductor device" was invented by Kiyota... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,065, issued on Aug. 25, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo). "Method of processing substrate, method of manufacturing semiconduc... Read More
ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,066, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Aluminum nitride dipole dopant film... Read More