US Patent Issued to KOKUSAI ELECTRIC on Aug. 25 for "Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,065, issued on Aug. 25, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).

"Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" was invented by Tomiyuki Shimizu (Toyama, Japan), Takashi Ozaki (Toyama, Japan), Naonori Akae (Toyama, Japan) and Keigo Nishida (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes forming a film containing a predetermined element, oxygen, and nitrogen on the substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a first precursor containing the predet...