US Patent Issued to Tokyo Electron on Aug. 25 for "Substrate processing method and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,058, issued on Aug. 25, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing apparatus" was invented by Makoto Wada (Nirasaki City, Japan), Takashi Matsumoto (Nirasaki City, Japan), Ryota Ifuku (Nirasaki City, Japan), Hiroki Yamada (Nirasaki City, Japan) and Haruhiko Furuya (Nirasaki City, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method includes: a carry-in step of carrying a substrate having a silicon-containing film on a surface of the substrate into a processing container; a first step of forming an adsorption layer by supplying an oxygen-containing gas into the proc...