US Patent Issued to Tokyo Electron on Aug. 25 for "Method of forming silicon nitride film and film forming apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,063, issued on Aug. 25, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method of forming silicon nitride film and film forming apparatus" was invented by Munehito Kagaya (Nirasaki City, Japan), Yuji Otsuki (Nirasaki City, Japan) and Yusuke Suzuki (Nirasaki City, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a silicon nitride film according to an aspect of the present disclosure forms a silicon nitride film in a recess formed in a surface of a substrate. The method includes a process of forming an adsorption-inhibiting region by exposing the substrate to plasma generated from an adsorption-inhibiting gas that contains a halo...