ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,462, issued on Sept. 1, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Contact structure, semiconductor device comprisi... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,463, issued on Sept. 1, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Stairless three-dimensional memory device with layer... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,464, issued on Sept. 1, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Power tap cell for front side power rail con... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,465, issued on Sept. 1, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Structure for backside signal and power" was... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,466, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Integrated circuit device including a via po... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,467, issued on Sept. 1, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Manufacturing method of semiconductor struc... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,468, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Interconnect structure pattern" was... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,469, issued on Sept. 1, was assigned to Sony Semiconductor Solutions Corp. (Kanagawa, Japan) and Taiwan Semiconductor Manufacturing Co Ltd (... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,470, issued on Sept. 1, was assigned to Nuvoton Technology Corp. (Hsinchu Science Park, Taiwan). "Sensing device and manufacturing method t... Read More
ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,471, issued on Sept. 1, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with filling layer and meth... Read More