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US Patent Issued to NANYA TECHNOLOGY on Sept. 1 for "Contact structure, semiconductor device comprising the same, and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,462, issued on Sept. 1, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Contact structure, semiconductor device comprisi... Read More


US Patent Issued to Sandisk Technologies on Sept. 1 for "Stairless three-dimensional memory device with layer contact via structures located above support pillar structures and methods of forming the same" (California Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,463, issued on Sept. 1, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Stairless three-dimensional memory device with layer... Read More


US Patent Issued to International Business Machines on Sept. 1 for "Power tap cell for front side power rail connection to BSPDN" (New York, Vermont, New Hampshire Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,464, issued on Sept. 1, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Power tap cell for front side power rail con... Read More


US Patent Issued to INTERNATIONAL BUSINESS MACHINES on Sept. 1 for "Structure for backside signal and power" (New York, New Hampshire, Vermont Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,465, issued on Sept. 1, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Structure for backside signal and power" was... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Integrated circuit device including a via power rail extending through device isolation film" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,466, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Integrated circuit device including a via po... Read More


US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 1 for "Manufacturing method of semiconductor structure and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,467, issued on Sept. 1, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Manufacturing method of semiconductor struc... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Interconnect structure pattern" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,468, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Interconnect structure pattern" was... Read More


US Patent Issued to Sony Semiconductor Solutions, Taiwan Semiconductor Manufacturing on Sept. 1 for "Semiconductor device" (Japanese, Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,469, issued on Sept. 1, was assigned to Sony Semiconductor Solutions Corp. (Kanagawa, Japan) and Taiwan Semiconductor Manufacturing Co Ltd (... Read More


US Patent Issued to Nuvoton Technology on Sept. 1 for "Sensing device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,470, issued on Sept. 1, was assigned to Nuvoton Technology Corp. (Hsinchu Science Park, Taiwan). "Sensing device and manufacturing method t... Read More


US Patent Issued to NANYA TECHNOLOGY on Sept. 1 for "Semiconductor device with filling layer and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,471, issued on Sept. 1, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with filling layer and meth... Read More