ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,463, issued on Sept. 1, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).
"Stairless three-dimensional memory device with layer contact via structures located above support pillar structures and methods of forming the same" was invented by Jixin Yu (San Jose, Calif.), Koichi Matsuno (Fremont, Calif.), Ruogu Matthew Zhu (San Jose, Calif.), Mark D. Kraman (San Jose, Calif.) and Johann Alsmeier (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating st...