US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 1 for "Manufacturing method of semiconductor structure and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,467, issued on Sept. 1, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Manufacturing method of semiconductor structure and semiconductor structure" was invented by Shuai Guo (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a manufacturing method of a semiconductor structure and a semiconductor structure, and relates to the technical field of semiconductors. The manufacturing method of a semiconductor structure includes: providing a substrate, and forming a stacked structure on the substrate; forming a hard mask layer on the stacked structure, where the hard mask layer includes...