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US Patent Issued to SAMSUNG ELECTRONICS on Sept. 15 for "Memory device with improved threshold voltage distribution and operating method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,332, issued on Sept. 15, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Memory device with improved threshold v... Read More


US Patent Issued to SK hynix on Sept. 15 for "Memory device for performing channel precharge operation and method for operating the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,333, issued on Sept. 15, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Memory device for performing channel precharge operati... Read More


US Patent Issued to Yangtze Memory Technologies on Sept. 15 for "Memory devices, memory systems, and control methods thereof to identify a programming failure" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,334, issued on Sept. 15, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory devices, memory systems, and control... Read More


US Patent Issued to SK hynix on Sept. 15 for "Memory device and method of performing a verify operation of the memory device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,335, issued on Sept. 15, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device and method of performing a verify operatio... Read More


US Patent Issued to SK hynix on Sept. 15 for "Shift registers" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,336, issued on Sept. 15, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Shift registers" was invented by Seong Jin Yun (Icheon-s... Read More


US Patent Issued to SK hynix on Sept. 15 for "Memory having latch circuit and memory system" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,337, issued on Sept. 15, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Memory having latch circuit and memory system" was inv... Read More


US Patent Issued to Micron Technology on Sept. 15 for "Interrupting a memory built-in self-test" (Idaho Inventor)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,338, issued on Sept. 15, was assigned to Micron Technology Inc. (Boise, Idaho). "Interrupting a memory built-in self-test" was invented by... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 15 for "Integrated circuit and method of operating same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,339, issued on Sept. 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Integrated circuit and method... Read More


US Patent Issued to Winbond Electronics on Sept. 15 for "Flash memory and testing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,340, issued on Sept. 15, was assigned to Winbond Electronics Corp. (Taichung City, Taiwan). "Flash memory and testing method thereof" was ... Read More


US Patent Issued to Micron Technology on Sept. 15 for "Cycling replacement blocks based on a die wafer location" (Singaporean, American Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,341, issued on Sept. 15, was assigned to Micron Technology Inc. (Boise, Idaho). "Cycling replacement blocks based on a die wafer location"... Read More