US Patent Issued to SAMSUNG ELECTRONICS on Sept. 15 for "Memory device with improved threshold voltage distribution and operating method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,332, issued on Sept. 15, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Memory device with improved threshold voltage distribution and operating method thereof" was invented by Joonam Kim (Suwon-si, South Korea), Sejun Park (Suwon-si, South Korea), Kangin Shin (Suwon-si, South Korea), Changhwan Shin (Suwon-si, South Korea), Hyeji Lee (Suwon-si, South Korea) and Woojae Jang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a memory device with improved threshold voltage distribution and an operating method of the memory device. The memory device includes a memory cell array including a plura...