US Patent Issued to SK hynix on Sept. 15 for "Memory device for performing channel precharge operation and method for operating the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,333, issued on Sept. 15, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Memory device for performing channel precharge operation and method for operating the same" was invented by Hyung Jin Choi (Gyeonggi-do, South Korea) and In Gon Yang (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device comprising: a memory cell array including a plurality of memory cell strings coupled between a plurality of bit lines and a common source line, and a plurality of word lines coupled to the memory cell strings, and a control circuit configured to: repeat a program loop including a program pulse application operation ...