US Patent Issued to Yangtze Memory Technologies on Sept. 15 for "Memory devices, memory systems, and control methods thereof to identify a programming failure" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,334, issued on Sept. 15, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory devices, memory systems, and control methods thereof to identify a programming failure" was invented by Lu Guo (Wuhan, China), Weijun Wan (Wuhan, China) and Wei Huang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, a memory system and a control method thereof to identify a programming state of memory cells includes an example memory device with a memory block including a plurality of memory cells; a plurality of word lines coupled to the memory block; and a peripheral circuit coupled to the plurality of word lines and ...