US Patent Issued to SK hynix on Sept. 15 for "Memory having latch circuit and memory system" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,337, issued on Sept. 15, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Memory having latch circuit and memory system" was invented by Min Su Park (Gyeonggi-do, South Korea), Kyung Whan Kim (Gyeonggi-do, South Korea) and Choung Ki Song (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory may include a memory array configured to store write data therein and provide the write data stored therein as read data, a nonvolatile memory circuit configured to store repair information therein, a repair latch circuit configured to receive the repair information from the nonvolatile memory circuit and store the received ...