ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,312, issued on Sept. 15, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Memory device with row decoder having main... Read More
ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,313, issued on Sept. 15, was assigned to Intel Corp. (Santa Clara, Calif.). "In-memory compute SRAM with integrated toggle/copy operation ... Read More
ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,314, issued on Sept. 15, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Systems and methods for performing independent pla... Read More
ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,315, issued on Sept. 15, was assigned to Korea Advanced Institute of Science and Technology (Daejeon, South Korea). "Neuromorphic synapse ... Read More
ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,316, issued on Sept. 15, was assigned to Kioxia Corp. (Tokyo). "Nonvolatile memory" was invented by Yasuhiko Kurosawa (Fujisawa, Japan). ... Read More
ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,317, issued on Sept. 15, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Three-dimensional memory device with integrated co... Read More
ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,318, issued on Sept. 15, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "SGS voltage in unselected blocks during program" w... Read More
ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,319, issued on Sept. 15, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory devices, methods for operating memor... Read More
ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,320, issued on Sept. 15, was assigned to EMEMORY TECHNOLOGY INC. (Hsinchu, Taiwan). "Charge pump circuit and charge pump device" was inven... Read More
ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,321, issued on Sept. 15, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Methods to reduce Vpass disturb in 3D NAND ... Read More