ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,316, issued on Sept. 15, was assigned to Kioxia Corp. (Tokyo).

"Nonvolatile memory" was invented by Yasuhiko Kurosawa (Fujisawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes control circuitry that executes a first programming operation and executes a second programming operation after the first programming operation. The first programming operation includes setting a threshold voltage of each of a second set of memory cells in a second section corresponding to write data, and setting a threshold voltage of each of the third set of memory cells in a third section. The second programming operation includes setting the...