US Patent Issued to Sandisk Technologies on Sept. 15 for "SGS voltage in unselected blocks during program" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,318, issued on Sept. 15, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"SGS voltage in unselected blocks during program" was invented by Alvin Joshua (Fujisawa, Japan), Yuki Kuniyoshi (Fujisawa, Japan), Akitomo Nakayama (Yokohama, Japan), Hayato Horie (Yokohama, Japan) and Hardwell Chibvongodze (Hiratsuka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Technology for programing NAND memory. A memory system has control circuitry that applies a low voltage (e.g., VSS) to SGS lines in one or more unselected blocks that neighbor a block that has been selected for programming. This low voltage keeps source select transistors off, w...