US Patent Issued to Yangtze Memory Technologies on Sept. 15 for "Methods to reduce Vpass disturb in 3D NAND memory" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,321, issued on Sept. 15, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Methods to reduce Vpass disturb in 3D NAND memory" was invented by Ying Cui (Wuhan, China), Songmin Jiang (Wuhan, China), Yali Song (Wuhan, China) and Hongtao Liu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a three-dimensional NAND memory device, comprising a memory array comprising blocks, each block includes first memory cells and second memory cells connected in series to a bit line, a word line driver, and a controller configured to control the word line driver to: performing a programming operation on ...