US Patent Issued to EMEMORY TECHNOLOGY on Sept. 15 for "Charge pump circuit and charge pump device" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,320, issued on Sept. 15, was assigned to EMEMORY TECHNOLOGY INC. (Hsinchu, Taiwan).

"Charge pump circuit and charge pump device" was invented by Zhe-Yi Lin (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A charge pump circuit includes a pump unit and an output transistor for outputting a pumped voltage generated by the pump unit. The pump unit includes a first capacitor, a second capacitor, a first transistor, a second transistor, and an auxiliary control unit. The first capacitor receives a first clock signal, and the second capacitor receives a second clock signal having a swing greater than that of the first clock signal. ...