ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,317, issued on Sept. 15, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device with integrated contact and support structure and method of making the same" was invented by Koichi Matsuno (Fremont, Calif.) and Johann Alsmeier (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first-tier alternating stack of first insulating layers and electrically conductive layers located over a substrate, a second-tier alternating stack of second insulating layers and second electrically conductive layers overlying the first-tier alternating stack, a memory stack structure vertically...