US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor devices" (South Korean Inventor)

Posted On: 2026-09-08

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,207, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices" was invented by Sangh... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Methods for forming devices with shallow source/drain contacts" (Taiwanese Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,208, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Methods for forming devices wit... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Integrated circuit device" (South Korean Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,209, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Integrated circuit device" was invented by H... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Semiconductor structure including bottom isolation and method for manufacturing the same" (Taiwanese Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,210, issued on Sept. 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure includi... Read More

US Patent Issued to Applied Materials on Sept. 8 for "Multilayer inner spacer for gate-all-around device" (California Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,211, issued on Sept. 8, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Multilayer inner spacer for gate-all-around device" ... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same" (Taiwanese Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,212, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Thin film transistor including a co... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Field effect transistor with multi-layer metal oxide semiconductor and multi-layer metal oxide gate dielectric, and integrated circuit device including the same" (South Korean Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,213, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Field effect transistor with multi-layer met... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Surface-doped channels for threshold voltage modulation" (Taiwanese Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,214, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Surface-doped channels for threshol... Read More

US Patent Issued to Mitsubishi Electric on Sept. 8 for "Semiconductor device comprising a first electrode, a second electrode, an interlayer film on the first electrode, and a protective film on the interlayer film; and semiconductor module comprising the semiconductor device" (Japanese Inventor)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,215, issued on Sept. 8, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device comprising a first electrode, a second ele... Read More

US Patent Issued to FUJI ELECTRIC on Sept. 8 for "Manufacturing method of forming a buffer region of semiconductor device and semiconductor device" (Japanese Inventors)

Posted On: 2026-09-08

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ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,216, issued on Sept. 8, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan). "Manufacturing method of forming a buffer region of semic... Read More

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US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor devices" (South Korean Inventor)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Methods for forming devices with shallow source/drain contacts" (Taiwanese Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Integrated circuit device" (South Korean Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 8 for "Semiconductor structure including bottom isolation and method for manufacturing the same" (Taiwanese Inventors)

US Patent Issued to Applied Materials on Sept. 8 for "Multilayer inner spacer for gate-all-around device" (California Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same" (Taiwanese Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Field effect transistor with multi-layer metal oxide semiconductor and multi-layer metal oxide gate dielectric, and integrated circuit device including the same" (South Korean Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Surface-doped channels for threshold voltage modulation" (Taiwanese Inventors)

US Patent Issued to Mitsubishi Electric on Sept. 8 for "Semiconductor device comprising a first electrode, a second electrode, an interlayer film on the first electrode, and a protective film on the interlayer film; and semiconductor module comprising the semiconductor device" (Japanese Inventor)

US Patent Issued to FUJI ELECTRIC on Sept. 8 for "Manufacturing method of forming a buffer region of semiconductor device and semiconductor device" (Japanese Inventors)