ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,214, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Surface-doped channels for threshold voltage modulation" was invented by Hsiao-Chun Chang (Hsinchu, Taiwan) and Guan-Jie Shen (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "GAAFET threshold voltages are tuned by introducing dopants into a channel region. In a GAAFET that has a stacked channel structure, dopants can be introduced into multiple channels by first doping nano-structured layers adjacent to the channels. Then, by an anneal operation, dopants can be driven, from surfaces of the doped layers into the channels, to achieve ...