US Patent Issued to FUJI ELECTRIC on Sept. 8 for "Manufacturing method of forming a buffer region of semiconductor device and semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,216, issued on Sept. 8, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan).

"Manufacturing method of forming a buffer region of semiconductor device and semiconductor device" was invented by Hiroshi Takishita (Matsumoto-city, Japan), Yuusuke Ooshima (Matsumoto-city, Japan), Takashi Yoshimura (Matsumoto-city, Japan) and Shuntaro Yaguchi (Matsumoto-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a semiconductor device including a buffer region in a semiconductor substrate is provided, comprising: obtaining a substrate concentration index related to at least one of an oxygen chemical concentration or a carbon ...