US Patent Issued to Mitsubishi Electric on Sept. 8 for "Semiconductor device comprising a first electrode, a second electrode, an interlayer film on the first electrode, and a protective film on the interlayer film; and semiconductor module comprising the semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,215, issued on Sept. 8, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device comprising a first electrode, a second electrode, an interlayer film on the first electrode, and a protective film on the interlayer film; and semiconductor module comprising the semiconductor device" was invented by Seiya Nakano (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An object of the present disclosure is to provide a semiconductor device and a semiconductor module in which fluctuations in the characteristics caused by pressure from above are suppressed. A semiconductor device according to the present disclosure includes a semiconductor s...