US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Field effect transistor with multi-layer metal oxide semiconductor and multi-layer metal oxide gate dielectric, and integrated circuit device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,213, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Field effect transistor with multi-layer metal oxide semiconductor and multi-layer metal oxide gate dielectric, and integrated circuit device including the same" was invented by Seunghee Lee (Suwon-si, South Korea), Yurim Kim (Suwon-si, South Korea), Teawon Kim (Suwon-si, South Korea), Yongsuk Tak (Suwon-si, South Korea) and Seungwoo Jang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a field effect transistor including a gate electrode layer, an oxide semiconductor layer including gallium (Ga) and at least one metal elem...