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US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Vertical nonvolatile memory device having hydrogen diffusion barrier layer and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,172, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Vertical nonvolatile memory device having... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Three-dimensional memory device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,173, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Three-dimensional memory device" was invente... Read More


US Patent Issued to Institute of Microelectronics, Chinese Academy of Sciences on Sept. 8 for "NOR-type memory device, method of manufacturing NOR-type memory device, and electronic apparatus including memory device" (New York Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,174, issued on Sept. 8, was assigned to Institute of Microelectronics, Chinese Academy of Sciences (Beijing). "NOR-type memory device, meth... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 8 for "Multi-channel ferroelectric memory structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,175, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Multi-channel ferroelectric memory ... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Three-dimensional ferroelectric semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,176, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Three-dimensional ferroelectric semiconducto... Read More


US Patent Issued to Intel on Sept. 8 for "Programmable capacitor memory arrays with stacked access transistors" (Oregon Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,177, issued on Sept. 8, was assigned to Intel Corp. (Santa Clara, Calif.). "Programmable capacitor memory arrays with stacked access transi... Read More


US Patent Issued to International Business Machines on Sept. 8 for "Scaled one transistor two resistor (1T 2R) memory" (New York Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,178, issued on Sept. 8, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Scaled one transistor two resistor (1T 2R) m... Read More


US Patent Issued to XILINX on Sept. 8 for "Programmable hybrid memory and capacitive device in a DRAM process" (California, Washington Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,179, issued on Sept. 8, was assigned to XILINX INC. (San Jose, Calif.). "Programmable hybrid memory and capacitive device in a DRAM process... Read More


US Patent Issued to MACRONIX INTERNATIONAL on Sept. 8 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,180, issued on Sept. 8, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan). "Semiconductor device and method for forming the... Read More


US Patent Issued to KIOXIA on Sept. 8 for "Semiconductor memory device" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,181, issued on Sept. 8, was assigned to KIOXIA Corp. (Tokyo). "Semiconductor memory device" was invented by Toshifumi Hashimoto (Fujisawa, ... Read More