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US Patent Issued to Yangtze Memory Technologies on Sept. 8 for "Semiconductor devices having designed bit lines and fabricating methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,152, issued on Sept. 8, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Semiconductor devices having designed bit lin... Read More


US Patent Issued to SK hynix on Sept. 8 for "Semiconductor device and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,153, issued on Sept. 8, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device and method for fabricating the same... Read More


US Patent Issued to NANYA TECHNOLOGY on Sept. 8 for "Memory device and fabrication method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,154, issued on Sept. 8, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Memory device and fabrication method thereof" wa... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,155, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor memory device" was invented... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor devices and methods of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,156, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices and methods of manufac... Read More


US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 8 for "Semiconductor structure comprising two vertical transistors and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,157, issued on Sept. 8, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure comprising two vert... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,158, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory device" was invented by... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor devices" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,159, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices" was invented by Juwon... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 8 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,160, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Sanggy... Read More


US Patent Issued to Sandisk Technologies on Sept. 8 for "Three-dimensional memory device including discrete charge storage elements and methods of forming the same" (California Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,161, issued on Sept. 8, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Three-dimensional memory device including discrete c... Read More