ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,156, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor devices and methods of manufacturing the same" was invented by Heejae Chae (Suwon-si, South Korea), Taejin Park (Suwon-si, South Korea), Hyunjin Lee (Suwon-si, South Korea), Hosang Lee (Suwon-si, South Korea) and Yun Choi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including a word line trench extending in a first horizontal direction; a gate dielectric layer in the word line trench; a word line extending in the first horizontal direction and in a lower portion of the word ...