US Patent Issued to Sandisk Technologies on Sept. 8 for "Three-dimensional memory device including discrete charge storage elements and methods of forming the same" (California Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,161, issued on Sept. 8, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device including discrete charge storage elements and methods of forming the same" was invented by Fei Zhou (San Jose, Calif.) and Raghuveer S. Makala (Campbell, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a memory device includes forming an alternating stack of disposable material layers and silicon nitride layers over a substrate, forming a memory opening through the alternating stack, forming a memory film and a vertical semiconductor channel in the memory opening, where the memory film includes a continuou...