US Patent Issued to NANYA TECHNOLOGY on Sept. 8 for "Memory device and fabrication method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,154, issued on Sept. 8, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Memory device and fabrication method thereof" was invented by Jhen-Yu Tsai (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device comprises a substrate; a first word line structure, a first dielectric layer; a dielectric liner, and a bit line structure. The first word line structure is in the substrate and comprises a first bottom conductive material and a first top conductive material, in which a top surface of the first bottom conductive material is wider than a bottom surface of the first top conductive material. The first di...