US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 8 for "Semiconductor structure comprising two vertical transistors and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,157, issued on Sept. 8, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure comprising two vertical transistors and method for forming same" was invented by Zhicheng Shi (Hefei, China), Ruiqi Zhang (Hefei, China) and Xinran Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure relates to a semiconductor structure and a method for forming the same. The semiconductor structure includes: a substrate; a storage array located on the substrate and including a plurality of memory cells arranged in an array along a first direction and a second direction, each memory cell including a trans...