US Patent Issued to Yangtze Memory Technologies on Sept. 8 for "Semiconductor devices having designed bit lines and fabricating methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,152, issued on Sept. 8, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Semiconductor devices having designed bit lines and fabricating methods thereof" was invented by Zhiyong Cai (Wuhan, China), Ziyu Zhang (Wuhan, China), Kang Yang (Wuhan, China), Hsing-An Lo (Wuhan, China) and Yi Zhou (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Three-dimensional (3D) semiconductor devices and fabricating methods are provided. In some implementations, a disclosed semiconductor device comprises: an array of vertical transistors each comprising a semiconductor body extending in a vertical direction; a plurality of word lines ea...