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US Patent Issued to mi2-factory on Sept. 8 for "Energy filter assembly for ion implantation system with at least one coupling element" (German Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,753, issued on Sept. 8, was assigned to mi2-factory GMBH (Jena, Germany). "Energy filter assembly for ion implantation system with at least... Read More


US Patent Issued to ASML Netherlands on Sept. 8 for "Electron-optical assembly comprising electromagnetic shielding" (Dutch, American Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,754, issued on Sept. 8, was assigned to ASML Netherlands B.V. (Veldhoven, Netherlands). "Electron-optical assembly comprising electromagnet... Read More


US Patent Issued to Hitachi High-Tech Science on Sept. 8 for "Focused ion beam device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,755, issued on Sept. 8, was assigned to Hitachi High-Tech Science Corp. (Tokyo). "Focused ion beam device" was invented by Koji Nagahara (T... Read More


US Patent Issued to FORSCHUNGSZENTRUM JULICH on Sept. 8 for "Magnetization device for an electron microscope and method" (German Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,756, issued on Sept. 8, was assigned to FORSCHUNGSZENTRUM JULICH GMBH (Julich, Germany). "Magnetization device for an electron microscope a... Read More


US Patent Issued to Carl Zeiss Microscopy on Sept. 8 for "Device and method for preparing microscopic samples via backside thinning" (German Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,757, issued on Sept. 8, was assigned to Carl Zeiss Microscopy GmbH (Jena, Germany). "Device and method for preparing microscopic samples vi... Read More


US Patent Issued to JIANGSU LEUVEN INSTRUMENTS on Sept. 8 for "Ion beam etching machine and lower electrode structure thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,758, issued on Sept. 8, was assigned to JIANGSU LEUVEN INSTRUMENTS Co. LTD. (Xuzhou, China). "Ion beam etching machine and lower electrode ... Read More


US Patent Issued to NuFlare Technology on Sept. 8 for "Beam detector, multi-charged-particle-beam irradiation apparatus, and adjustment method for beam detector" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,759, issued on Sept. 8, was assigned to NuFlare Technology Inc. (Yokohama, Japan). "Beam detector, multi-charged-particle-beam irradiation ... Read More


US Patent Issued to HITACHI HIGH-TECH on Sept. 8 for "Spin-polarized scanning electron microscope" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,760, issued on Sept. 8, was assigned to HITACHI HIGH-TECH Corp. (Tokyo). "Spin-polarized scanning electron microscope" was invented by Teru... Read More


US Patent Issued to Tokyo Electron on Sept. 8 for "Method for plasma processing" (Texas Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,762, issued on Sept. 8, was assigned to Tokyo Electron Ltd. (Tokyo). "Method for plasma processing" was invented by Justin Moses (Austin, T... Read More


US Patent Issued to Tokyo Electron on Sept. 8 for "Plasma processing system, assistance device, assistance method, and assistance program" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,763, issued on Sept. 8, was assigned to Tokyo Electron Ltd. (Tokyo). "Plasma processing system, assistance device, assistance method, and a... Read More