ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,758, issued on Sept. 8, was assigned to JIANGSU LEUVEN INSTRUMENTS Co. LTD. (Xuzhou, China).

"Ion beam etching machine and lower electrode structure thereof" was invented by Huaidong Zhang (Xuzhou, China), Yaoyao Zhang (Xuzhou, China), Dongdong Hu (Xuzhou, China), Chaoquan Yang (Xuzhou, China), Shiran Cheng (Xuzhou, China), Xiang Yu (Xuzhou, China), Xiaoli Shi (Xuzhou, China) and Kaidong Xu (Xuzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ion beam etching machine and a lower electrode structure thereof. The lower electrode structure comprises an electrode plate, a ring pressing mechanism, and a lifting mechanism, the ring pressing me...