ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,161, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method of manufacturing a semicon... और पढ़ें
ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,162, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Gate structure of semiconductor devic... और पढ़ें
ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,163, issued on May 19, was assigned to Monolithic 3D Inc. (Allen, Texas). "Method to produce a 3D multilayer semiconductor device and struct... और पढ़ें
ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,164, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor transistor devices incl... और पढ़ें
ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,165, issued on May 19, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou City, China). "Semiconductor device and method for m... और पढ़ें
ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,166, issued on May 19, was assigned to LX Semicon Co. Ltd. (Daejeon, South Korea). "GaN power device" was invented by Jang Hyun Yoon (Daejeo... और पढ़ें
ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,167, issued on May 19, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Drain contact extension layout for hard switching robustness" was i... और पढ़ें
ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,168, issued on May 19, was assigned to INNOSCIENCE (SUZHOU) SEMICONDUCTOR Co. LTD. (Suzhou City, China). "Semiconductor device and manufactu... और पढ़ें
ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,169, issued on May 19, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan). "Semiconductor device integrating a hig... और पढ़ें
ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,170, issued on May 19, was assigned to Qorvo US Inc. (Greensboro, N.C.). "Shielded gate transistor" was invented by Subrata Halder (Greensbo... और पढ़ें