US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Gate structure of semiconductor device and method of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,162, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gate structure of semiconductor device and method of forming same" was invented by Ru-Shang Hsiao (Jhubei City, Taiwan), Ying Ming Wang (Tainan City, Taiwan) and Ying Hsin Lu (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of forming the same are provided. A method includes forming a fin extending from a substrate. A sacrificial gate electrode layer is formed along a sidewall and a top surface of the fin. A patterning process is performed on the sacrificial gate electrode layer to form a sacrif...