ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,161, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device and a semiconductor device" was invented by An-Hung Tai (Hsinchu, Taiwan), Chia-Wei Chen (Hsinchu, Taiwan), Shih-Hang Chiu (Taichung City, Taiwan), Yu-Hong Lu (Hsinchu City, Taiwan), Hui-Chi Chen (Zhudong Township, Taiwan), Kuo-Feng Yu (Zhudong Township, Taiwan) and Jian-Hao Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a lower conductive layer is formed in an opening formed in a dielectric layer, and the lower conducti...