US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Deposition system and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,404, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Deposition system and method" was i... Read More

US Patent Issued to Applied Materials on Sept. 1 for "Thermal CVD of titanium silicide methods to form semiconductor structures" (California Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,405, issued on Sept. 1, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Thermal CVD of titanium silicide methods to form sem... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Method of manufacturing integrated circuit device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,406, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Method of manufacturing integrated circuit d... Read More

US Patent Issued to Applied Materials on Sept. 1 for "RF pulsing assisted tungsten-containing film deposition" (California Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,407, issued on Sept. 1, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "RF pulsing assisted tungsten-containing film deposit... Read More

US Patent Issued to Destination 2D on Sept. 1 for "Large-area wafer-scale CMOS-compatible 2D-material intercalation doping tools, processes, and methods, including doping of synthesized graphene" (California Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,408, issued on Sept. 1, was assigned to Destination 2D Inc. (San Jose, Calif.). "Large-area wafer-scale CMOS-compatible 2D-material interca... Read More

US Patent Issued to Applied Materials on Sept. 1 for "In-situ carbon liner for high aspect ratio features" (American, French Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,409, issued on Sept. 1, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "In-situ carbon liner for high aspect ratio features"... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Replacement gate process for semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,410, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Replacement gate process for se... Read More

US Patent Issued to Tokyo Electron on Sept. 1 for "Methods to improve etch uniformity across a semiconductor substrate when etching with a hydrofluoric acid (HF) and nitric acid (HNO 3 ) solution" (Texas Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,411, issued on Sept. 1, was assigned to Tokyo Electron Ltd. (Tokyo). "Methods to improve etch uniformity across a semiconductor substrate w... Read More

US Patent Issued to Fujifilm Electronic Materials U.S.A. on Sept. 1 for "Etching compositions" (Arizona Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,412, issued on Sept. 1, was assigned to Fujifilm Electronic Materials U.S.A. Inc. (North Kingstown, R.I.). "Etching compositions" was inven... Read More

US Patent Issued to Tokyo Electron on Sept. 1 for "Methods for wet atomic layer etching of tungsten using halogenation" (Texas Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,413, issued on Sept. 1, was assigned to Tokyo Electron Ltd. (Tokyo). "Methods for wet atomic layer etching of tungsten using halogenation" ... Read More

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