US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Method of manufacturing integrated circuit device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,406, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Method of manufacturing integrated circuit device" was invented by Younghun Sung (Suwon-si, South Korea), Sunhye Hwang (Suwon-si, South Korea), Sangho Rha (Suwon-si, South Korea), Seungjae Sim (Suwon-si, South Korea), Younseok Choi (Suwon-si, South Korea), Byungkeun Hwang (Suwon-si, South Korea) and Youn Joung Cho (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing an integrated circuit device, the method including forming a doped silicon oxide film on a substrate by supplying, onto the substrate, a silicon precu...