US Patent Issued to Tokyo Electron on Sept. 1 for "Methods to improve etch uniformity across a semiconductor substrate when etching with a hydrofluoric acid (HF) and nitric acid (HNO 3 ) solution" (Texas Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,411, issued on Sept. 1, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods to improve etch uniformity across a semiconductor substrate when etching with a hydrofluoric acid (HF) and nitric acid (HNO 3 ) solution" was invented by Derek Bassett (Austin, Texas) and Kate Abel (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides wet processing systems and methods for improving etch uniformity across a semiconductor substrate when etching a silicon surface with a hydrofluoric acid (HF) and nitric acid (HNO3) etch solution (otherwise referred to herein as an HF+HNO3 etch solution). More specifically, the present ...