US Patent Issued to Applied Materials on Sept. 1 for "RF pulsing assisted tungsten-containing film deposition" (California Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,407, issued on Sept. 1, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"RF pulsing assisted tungsten-containing film deposition" was invented by Qinghua Zhao (Milpitas, Calif.), Guoqing Li (Santa Clara, Calif.) and Rui Cheng (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary semiconductor processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber, the deposition precursors may be or include a tungsten-containing precursor. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may ...