US Patent Issued to NANYA TECHNOLOGY on April 21 for "Semiconductor structure and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,519, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor structure and manufacturing meth... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,520, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and manufacturing... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor memory having discrete active regions and method of making the same" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,521, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China). "Semiconductor memory having discrete active re... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and method for forming semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,522, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and method for fo... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Semiconductor memory devices" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,523, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory devices" was invented... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Memory structure, semiconductor structure and method for mamufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,524, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Memory structure, semiconductor structure... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure, method for manufacturing semiconductor structure, memory and method for manufacturing memory" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,525, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure, method for manuf... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,526, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and method for ma... Read More

US Patent Issued to Intel on April 21 for "Integrated circuit structures having memory access transistor with backside contact" (Oregon, California Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,527, issued on April 21, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrated circuit structures having memory access transistor... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,528, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Youn... Read More

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