US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,520, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and manufacturing method thereof" was invented by Tao Chen (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure manufacturing method includes: providing a substrate and etching the substrate to form first trenches; filling each of the first trenches with an oxide layer having a top surface not lower than that of the substrate; etching regions, adjacent to side walls of the first trench, in the oxide layer downwards to form second trenches, wherein a depth of the second trench is less than a ...