US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Memory structure, semiconductor structure and method for mamufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,524, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Memory structure, semiconductor structure and method for mamufacturing same" was invented by Qinghua Han (Hefei, China), JeongGi Kim (Hefei, China) and Gyuseog Cho (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a memory structure, a semiconductor structure and a method for manufacturing same. The semiconductor structure includes: a substrate, isolation structures provided in the substrate, delimiting an active area in the substrate, the active area including a channel region, and a source region and a drain region at opposite ...