US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure, method for manufacturing semiconductor structure, memory and method for manufacturing memory" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,525, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure, method for manufacturing semiconductor structure, memory and method for manufacturing memory" was invented by Guangsu Shao (Hefei, China), Yunsong Qiu (Hefei, China), Deyuan Xiao (Hefei, China) and Xingsong Su (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes at least one transistor. The transistor includes a channel, a gate, a source, and a drain. The channel includes a first material layer and a second material layer arranged around the first material layer. Resistivity of the firs...