US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and method for forming semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,522, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and method for forming semiconductor structure" was invented by Deyuan Xiao (Hefei City, China), Yi Jiang (Hefei City, China), Guangsu Shao (Hefei City, China), Xingsong Su (Hefei City, China) and Yunsong Qiu (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes: a substrate, multiple active pillars located in the substrate, and multiple word lines. The multiple active pillars are arranged in...