ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,752, issued on April 7, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Method of making a three-dimensional memory device u... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,753, issued on April 7, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Vertical semiconductor device and method for fabricating t... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,754, issued on April 7, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Electronic device having stacked structures and method f... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,755, issued on April 7, was assigned to Zhuhai Chuangfeixin Technology Co. Ltd. (Zhuhai, China). "Memory storage device and method of manuf... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,756, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Phase change material (PCM) switch ... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,757, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Structure and formation method ... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,758, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device including dummy pad" wa... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,759, issued on April 7, was assigned to International Business Machines Corp. (Armonk, N.Y.). "High-density metal-insulator-metal capacitor... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,760, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and method of fabricati... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,761, issued on April 7, was assigned to Infineon Technologies Austria AG (Villach, Austria). "Diode including a trench electrode subdivided... Read More