ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,753, issued on April 7, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Vertical semiconductor device and method for fabricating the same" was invented by Yoo Hyun Noh (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes forming a source structure over a lower structure with interconnections; forming a first contact plug that penetrates the source structure to be coupled to the interconnections, and a first sacrificial pad that penetrates the source structure and is spaced apart from the first contact plug; forming an upper structure that covers the first sacrificial...