US Patent Issued to International Business Machines on April 7 for "High-density metal-insulator-metal capacitor integration wth nanosheet stack technology" (New York Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,759, issued on April 7, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"High-density metal-insulator-metal capacitor integration wth nanosheet stack technology" was invented by Julien Frougier (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Veeraraghavan S. Basker (Schenectady, N.Y.) and Andrew Gaul (Halfmoon, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An approach provides a metal-insulator-metal capacitor with a comb-like structure. The metal-insulator-metal capacitor includes a first electrode material forming a central, vertical portion of the first electrode metal and two sets of stacked horizontal portions of the ...