ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,779, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFCATURING Co. LTD. (Hsinchu, Taiwan). "Gate-all-around device with protect... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,780, issued on April 7, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Gate-all-around transistors with hybrid orie... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,781, issued on April 7, was assigned to GE AVIATION SYSTEMS LLC (Grand Rapids, Mich.). "Semiconductor switching device" was invented by Col... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,782, issued on April 7, was assigned to IceMOS Technology Ltd. (Great Britain). "Super-junction MOSFET/IGBT with MEMS layer transfer and WB... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,783, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Reducing parasitic capacitance in s... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,784, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device having doped g... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,785, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan). "Semiconductor devices and methods ... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,786, issued on April 7, was assigned to Adeia Semiconductor Solutions LLC (San Jose, Calif.). "Field effect transistor structures" was inve... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,787, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Field effect transistor with dual l... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,788, issued on April 7, was assigned to Tokyo Electron Ltd. (Tokyo). "Method to form silicon-germanium nanosheet structures" was invented b... Read More