US Patent Issued to Taiwan Semiconductor Manufacturing on April 7 for "Field effect transistor with dual layer isolation structure and method" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,787, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Field effect transistor with dual layer isolation structure and method" was invented by Jung-Chien Cheng (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu, Taiwan), Shi Ning Ju (Hsinchu, Taiwan), Guan-Lin Chen (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a stack of first semiconductor nanostructures over a substrate and a stack of second semiconductor nanostructures over the substrate. The device includes an isolation structure between the first and second semiconductor nanostruct...