US Patent Issued to Taiwan Semiconductor Manufacturing on April 7 for "Semiconductor device having doped gate dielectric layer and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,784, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device having doped gate dielectric layer and method for forming the same" was invented by Te-Yang Lai (Hsinchu, Taiwan), Hsueh-Ju Chen (Taipei, Taiwan), Tsung-Da Lin (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a semiconductor device includes a first channel region disposed in a first device region over a substrate; a first gate dielectric layer disposed over the first channel region; and a gate electrode disposed over the first gate dielectric layer. The first g...